4-9 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos pin 1 indicator rf out ground rf in ground 1 9 6 5 7 8 4 3 2 NBB-302 cascadable broadband gaas mmic amplifier dc to 12ghz ? narrow and broadband commercial and military radio designs ? linear and saturated amplifiers ? gain stage or driver amplifiers for mwradio/optical designs (ptp/pmp/ lmds/unii/vsat/wlan/cellular/dwdm) the NBB-302 cascadable broadband ingap/gaas mmic amplifier is a low-cost, high-performance solution for gen- eral purpose rf and microwave amplification needs. this 50 ? gain block is based on a reliable hbt proprietary mmic design, providing unsurpassed performance for small-signal applications. designed with an external bias resistor, the NBB-302 provides flexibility and stability. the NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high- volume tape-and-reel requir ements. it is available in either packaged or chip (nbb-300-d) form, where its gold metallization is ideal for hybrid circuit designs. ? reliable, low-cost hbt design ? 12.0db gain, +13.7dbm p1db@2ghz ? high p1db of +14.0dbm@6.0ghz and +11.0dbm@14.0ghz ? single power supply operation ?50 ? i/o matched for high freq. use NBB-302 cascadable broadband gaas mmic amplifier dc to 12ghz NBB-302-t1 or -t3tape & reel, 1000 or 3000 pieces (respectively) NBB-302-e fully assembled evaluation board nbb-x-k1 extended frequency in gap amp designer?s tool kit 0 rev a4 031110 notes: 1. solder pads are coplanar to within 0.025 mm. 2. lid will be centered relative to frontside metallization with a tolerance of 0.13 mm. 3. mark to include two characters and dot to reference pin 1. n3 2.39 min 2.59 max lid id 1.70 min 1.91 max 2.94 min 3.28 max pin 1 indicator 1.00 min 1.50 max 0.025 min 0.125 max 0.38 nom pin 1 indicator rf out 0.98 min 1.02 max ground 0.50 nom 0.50 nom all dimensions in millimeters 0.37 min 0.63 max rf in ground package style: mpga, bowtie, 3x3, ceramic 9
4-10 NBB-302 rev a4 031110 absolute maximum ratings parameter rating unit rf input power +20 dbm power dissipation 300 mw device current 70 ma channel temperature 200 c operating temperature -45 to +85 c storage temperature -65 to +150 c exceeding any one or a combination of these limits may cause permanent damage. parameter specification unit condition min. typ. max. overall v d =+3.9v, i cc =50ma, z 0 =50 ? , t a =+25c small signal power gain, s21 12.0 13.5 db f=0.1ghz to 1.0ghz 11.0 13.0 db f=1.0ghz to 4.0ghz 12.5 db f=4.0ghz to 6.0ghz 9.0 10.5 db f=6.0ghz to 12.0ghz 9.5 (avg.) db f=12.0ghz to 14.0ghz gain flatness, gf 0.6 db f=0.1ghz to 8.0ghz input and output vswr 2.4:1 f=0.1ghz to 4.0ghz 2.0:1 f=4.0ghz to 12.0ghz 2.8:1 f=12.0ghz to 15.0ghz bandwidth, bw 12.5 ghz bw3 (3db) output power @ -1db compression, p1db 13.7 dbm f=2.0ghz 14.8 dbm f=6.0ghz 11.0 dbm f=14.0ghz noise figure, nf 5.5 db f=3.0ghz third order intercept, ip3 +23.5 dbm f=2.0ghz reverse isolation, s12 -15 db f=0.1ghz to 12.0ghz device voltage, v d 3.6 3.9 4.2 v gain temperature coefficient, g t / t -0.0015 db/c mttf versus temperature @ i cc =50ma case temperature 85 c junction temperature 122.9 c mttf >1,000,000 hours thermal resistance jc 194 c/w j t t case ? v d i cc ? -------------------------- - jc cwatt ? () = caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-11 NBB-302 rev a4 031110 pin function description interface schematic 1gnd ground connection. for best performance, keep traces physically short and connect immediately to ground plane. 2gnd same as pin 1. 3gnd same as pin 1. 4rf in rf input pin. this pin is not internally dc blocked. a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. dc coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 5gnd same as pin 1. 6gnd same as pin 1. 7gnd same as pin 1. 8rf out rf output and bias pin. biasing is accomplished with an external series resistor and chok e inductor to v cc . the resistor is selected to set the dc current into this pin to a desired level. the resistor value is deter- mined by the following equation: care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating cur- rent over the planned operating temperature. this means that a resistor between the supply and this pin is always required, even if a supply near 5.0v is available, to provide dc feedback to prevent thermal run- away. alternatively, a constant current supply circuit may be imple- mented. because dc is present on this pin, a dc blocking capacitor, suitable for the frequency of operation, should be used in most applica- tions. the supply side of the bias network should also be well bypassed. 9gnd same as pin 1. r v cc v device ? () i cc ------------------------------------------- = rf out rf in
4-12 NBB-302 rev a4 031110 typical bias configuration application notes related to biasing circuit, device footprint, and thermal considerations are available on request. application notes die attach the die attach process mechanically attaches the die to the circuit substrate. in addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. wire bonding electrical connections to the chip are made through wire bonds. either wedge or ball bonding methods are acceptable practices for wire bonding. assembly procedure epoxy or eutectic die attach are both accept able attachment me thods. top and bo ttom metallization are gold. conductive silver-filled epoxies are recommended. this procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. a 150c cure for 1 hour is necessary. recommended epoxy is ablebond 84-1lmi from ablestik. bonding temperature (wedge or ball) it is recommended that the heater block temperature be set to 160c10c. recommended bias resistor values supply voltage, v cc (v)5 8 10121520 bias resistor, r cc ( ? ) 22 81 122 162 222 322 c block 4 8 1,2,3 c block in out l choke (optional) r cc v cc v d = 3.9 v v device 5,6,7,9
4-13 NBB-302 rev a4 031110 extended frequency ingap ampl ifier designer?s tool kit nbb-x-k1 this tool kit was created to assist in the design-in of the rfmd nbb- and nlb-series ingap hbt gain block amplifiers. each tool kit contains the following. ? 5 each nbb-300, nbb-310 and nbb-400 ceramic micro-x amplifiers ? 5 each nlb-300, nlb-310 and nlb-400 plastic micro-x amplifiers ? 2 broadband evaluation boards and high frequency sma connectors ? broadband bias instructions and specification summary index for ease of operation
4-14 NBB-302 rev a4 031110 tape and reel dimensions all dimensions in millimeters a d b f t o s 330 mm (13") reel micro-x, mpga symbol size (mm) items size (inches) flange b t f 330 +0.25/-4.0 18.4 max 12.4 +2.0 diameter thickness space between flange 13.0 +0.079/-0.158 0.724 max 0.488 +0.08 hub o s a 102.0 ref 13.0 +0.5/-0.2 1.5 min outer diameter spindle hole diameter key slit width d 20.2 min key slit diameter 4.0 ref 0.512 +0.020/-0.008 0.059 min 0.795 min pin 1 user direction of feed ao = 3.6 mm bo = 3.6 mm ko = 1.7 mm notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. camber not to exceed 1 mm in 100 mm. 3. material: ps+c 4. ao and bo measured on a plane 0.3 mm above the bottom of the pocket. 5. ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. all dimensions in mm section a-a r0.3 max. ko 0.30 0.05 5.50 0.05 see note 6 12.00 0.30 1.75 a a r0.5 typ 1.5 min. bo ao 8.0 2.00 0.05 see note 6 4.0 see note 1 +0.1 -0.0 1.5
4-15 NBB-302 rev a4 031110 device voltage versus amplifier current 3.70 3.75 3.80 3.85 3.90 3.95 4.00 35.00 40.00 45.00 50.00 55.00 60.00 amplifier current, i cc (ma) device voltage, v d (v) p1db versus frequency at +25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 frequency (ghz) p1db (dbm) p out /gain versus p in at 14 ghz -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 p in (dbm) p out (dbm), gain (db) pout (dbm) gain (db) p out /gain versus p in at 6 ghz 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 p in (dbm) p out (dbm), gain (db) pout (dbm) gain (db) third order intercept versus frequency at +25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 frequency (ghz) output ip3 (dbm)
4-16 NBB-302 rev a4 031110 note: the s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. the insertion losses of the evaluation board and connectors are as follows: 1ghz to 4ghz=-0.06db 5ghz to 9ghz=-0.22db 10ghz to 14ghz=-0.50db 15ghz to 20ghz=-1.08db s22 versus frequency at +25c -20.0 -15.0 -10.0 -5.0 0.0 0.0 5.0 10.0 15.0 20.0 frequency (ghz) s22 (db) s21 versus frequency at +25c 0.0 5.0 10.0 15.0 20.0 0.0 5.0 10.0 15.0 20.0 frequency (ghz) s21 (db) s12 versus frequency at +25c -20.0 -15.0 -10.0 -5.0 0.0 0.0 5.0 10.0 15.0 20.0 frequency (ghz) s12 (db) s11 versus frequency at +25c -20.0 -15.0 -10.0 -5.0 0.0 0.0 5.0 10.0 15.0 20.0 frequency (ghz) s11 (db)
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